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1. product pro?le 1.1 general description a 100 w ldmos rf power transistor for broadcast transmitter applications and industrial applications. the transistor can deliver 100 w broadband from hf to 1 ghz. the excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. 1.2 features n 2-tone performance at 860 mhz, a drain-source voltage v ds of 40 v and a quiescent drain current i dq = 0.5 a: u peak envelope power load power = 100 w u power gain = 21 db u drain ef?ciency = 47 % u third order intermodulation distortion = - 35 dbc n dvb performance at 858 mhz, a drain-source voltage v ds of 40 v and a quiescent drain current i dq = 0.5 a: u average output power = 24 w u power gain = 22 db u drain ef?ciency = 33 % u third order intermodulation distortion = - 34 dbc (4.3 mhz from center frequency) BLF871 uhf power ldmos transistor rev. 02 5 march 2009 preliminary data sheet table 1. typical performance rf performance at v ds = 40 v in a common-source 860 mhz test circuit. mode of operation f p l p l(pep) p l(av) g p h d imd3 pa r (mhz) (w) (w) (w) (db) (%) (dbc) (db) cw, class ab 860 100 - - 21 60 - - 2-tone, class ab f 1 = 860; f 2 = 860.1 - 100 - 21 47 - 35 - dvb-t (8k ofdm) 858 - - 24 22 33 - 34 [1] 8.3 [2] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling. www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 2 of 18 nxp semiconductors BLF871 uhf power ldmos transistor n integrated esd protection n excellent ruggedness n high power gain n high ef?ciency n excellent reliability n easy power control n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n communication transmitter applications in the uhf band n industrial applications in the uhf band 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version BLF871 - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot467c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 89 v v gs gate-source voltage - 0.5 +13 v t stg storage temperature - 65 +150 c t j junction temperature - 200 c www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 3 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l(av) =50w [1] 0.95 k/w table 6. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 1.12 ma [1] 89 - 105.5 v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 112 ma [1] 1.4 - 2.4 v i dss drain leakage current v gs =0v; v ds =40v - - 1.4 m a i dsx drain cut-off current v gs =v gsth + 3.75 v; v ds =10v 16.7 20 - a i gss gate leakage current v gs =10v; v ds = 0 v - - 140 na r ds(on) drain-source on-state resistance v gs =v gsth + 3.75 v; i d = 3.7 a [1] - 210 - m w c iss input capacitance v gs = 0 v; v ds =40v; f=1mhz -95- pf c oss output capacitance v gs = 0 v; v ds =40v; f=1mhz -30- pf c rss reverse transfer capacitance v gs = 0 v; v ds =40v; f=1mhz -1- pf www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 4 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7. application information [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values 001aaj276 v ds (v) 060 40 20 80 40 120 160 c oss (pf) 0 table 7. rf performance in a common-source narrowband 860 mhz test circuit t h =25 c unless otherwise speci?ed. mode of operation f v ds i dq p l(pep) p l(av) g p h d imd3 pa r (mhz) (v) (a) (w) (w) (db) (%) (dbc) (db) 2-tone, class ab f 1 = 860; f 2 = 860.1 40 0.5 100 - > 19 > 44 < - 30 - dvb-t (8k ofdm) 858 40 0.5 - 24 > 19 > 30 < - 31 [1] > 7.8 [2] www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 5 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.1 narrowband rf ?gures 7.1.1 cw 7.1.2 2-tone v ds =40v; i dq = 0.5 a; measured in a common source narrowband 860 mhz test circuit. fig 2. cw power gain and drain ef?ciency as a function of load power; typical values 001aaj277 p l (w) 0 180 120 60 20 18 22 24 g p (db) h d (%) 16 40 20 60 80 0 g p h d v ds =40v; i dq = 0.5 a; measured in a common source narrowband 860 mhz test circuit. v ds = 40 v; i dq = 0.5 a; measured in a common source narrowband 860 mhz test circuit. (1) low frequency component (2) high frequency component fig 3. 2-tone power gain and drain ef?ciency as functions of average load power; typical values fig 4. 2-tone third order intermodulation distortion as a function of average load power; typical values 001aaj278 p l(av) (w) 0 120 80 40 21 19 23 25 g p (db) h d (%) 17 40 20 60 80 0 g p h d p l(av) (w) 0 120 80 40 001aaj279 - 40 - 20 0 imd3 (dbc) - 60 (1) (2) www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 6 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.1.3 dvb-t v ds =40v; i dq = 0.5 a; measured in a common source narrowband 860 mhz test circuit. v ds = 40 v; i dq = 0.5 a; measured in a common source narrowband 860 mhz test circuit. (1) low frequency component (2) high frequency component fig 5. dvb-t power gain and drain ef?ciency as functions of average load power; typical values fig 6. dvb-t third order intermodulation distortion as a function of average load power; typical values p l(av) (w) 060 40 20 001aaj280 20 22 24 g p (db) h d (%) 18 20 40 60 0 g p h d 001aaj281 p l(av) (w) 060 40 20 - 35 - 45 - 25 - 15 imd3 (dbc) - 55 (1) (2) www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 7 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.2 broadband rf ?gures 7.2.1 2-tone i dq = 0.5 a; measured in a common source broadband test circuit as described in section 8 . (1) v ds = 40 v; p l(av) = 45 w (2) v ds = 42 v; p l(av) = 50 w i dq = 0.5 a; measured in a common source broadband test circuit as described in section 8 . (1) v ds = 40 v; p l(av) = 45 w (2) v ds = 42 v; p l(av) = 50 w fig 7. 2-tone power gain and drain ef?ciency as a function of frequency; typical values fig 8. 2-tone third order intermodulation distortion as a function of frequency; typical values f (mhz) 400 900 800 600 700 500 001aaj282 18 16 20 22 g p (db) h d (db) 14 50 40 60 70 30 (2) (1) (2) (1) g p h d f (mhz) 400 900 800 600 700 500 001aaj283 - 40 - 20 0 imd3 (dbc) - 60 (2) (1) www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 8 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.2.2 dvb-t i dq = 0.5 a; measured in a common source broadband test circuit as described in section 8 . (1) v ds = 40 v; p l(av) = 22 w (2) v ds = 42 v; p l(av) = 24 w i dq = 0.5 a; measured in a common source broadband test circuit as described in section 8 . (1) v ds = 40 v; p l(av) = 22 w (2) v ds = 42 v; p l(av) = 24 w fig 9. dvb-t power gain and drain ef?ciency as functions of frequency; typical values fig 10. dvb-t third order intermodulation distortion as a function of frequency; typical values i dq = 0.5 a; measured in a common source broadband test circuit as described in section 8 . par of input signal = 9.5 db at 0.01 % probability on ccdf. (1) par at 0.01 % probability on the ccdf; v ds = 40 v; p l(av) = 22 w (2) par at 0.01 % probability on the ccdf; v ds = 42 v; p l(av) = 24 w (3) par at 0.1 % probability on the ccdf; v ds = 40 v; p l(av) = 22 w (4) par at 0.1 % probability on the ccdf; v ds = 42 v; p l(av) = 24 w fig 11. dvb-t par at 0.1 % and at 0.01 % probability on the ccdf as function of frequency; typical values f (mhz) 400 900 800 600 700 500 001aaj284 18 20 22 g p (db) 16 30 40 50 20 h d (%) (2) (1) (1) (2) g p h d f (mhz) 400 900 800 600 700 500 001aaj285 - 40 - 20 0 imd3 (dbc) - 60 (2) (1) f (mhz) 400 900 800 600 700 500 001aaj286 7 6 8 9 pa r (db) 5 (1) (2) (3) (4) www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 9 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.3 ruggedness in class-ab operation the BLF871 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 42 v; f = 860 mhz at rated power. 7.4 impedance information fig 12. de?nition of transistor impedance table 8. typical impedance simulated z i and z l device impedance; impedance info at v ds = 42 v. f z i z l mhz w w 300 0.977 - j3.327 5.506 + j1.774 325 0.977 - j2.983 5.366 + j1.858 350 0.978 - j2.681 5.223 + j1.930 375 0.979 - j2.414 5.078 + j1.990 400 0.979 - j2.174 4.932 + j2.040 425 0.980 - j1.956 4.786 + j2.079 450 0.981 - j1.758 4.640 + j2.108 475 0.982 - j1.576 4.495 + j2.128 500 0.982 - j1.407 4.352 + j2.138 525 0.983 - j1.250 4.212 + j2.140 550 0.984 - j1.103 4.074 + j2.135 575 0.985 - j0.964 3.940 + j2.122 600 0.986 - j0.834 3.809 + j2.102 625 0.987 - j0.709 3.682 + j2.077 650 0.988 - j0.591 3.558 + j2.045 675 0.990 - j0.478 3.438 + j2.009 700 0.991 - j0.370 3.323 + j1.968 725 0.992 - j0.266 3.211 + j1.923 750 0.993 - j0.165 3.103 + j1.874 775 0.995 - j0.068 3.000 + j1.822 800 0.996 + j0.026 2.900 + j1.766 825 0.997 + j0.117 2.804 + j1.708 850 0.999 + j0.206 2.711 + j1.648 875 1.000 + j0.292 2.623 + j1.586 900 1.002 + j0.376 2.538 + j1.521 001aai086 gate z i drain z l www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 10 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 7.5 reliability 925 1.004 + j0.459 2.456 + j2.455 950 1.005 + j0.540 2.378 + j2.388 975 1.007 + j0.619 2.303 + j2.320 1000 1.009 + j0.696 2.230 + j2.250 table 8. typical impedance continued simulated z i and z l device impedance; impedance info at v ds = 42 v. f z i z l mhz w w ttf (0.1 % failure fraction). the reliability at pulsed conditions can be calculated as follows: ttf (0.1 %) 1 / d . (1) t j = 100 c (2) t j = 110 c (3) t j = 120 c (4) t j = 130 c (5) t j = 140 c (6) t j = 150 c (7) t j = 160 c (8) t j = 170 c (9) t j = 180 c (10) t j = 190 c (11) t j = 200 c fig 13. BLF871 electromigration (i ds(dc) ) 001aaj287 10 2 10 10 4 10 3 10 5 years 1 i ds(dc) (a) 0 6 4 2 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 11 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 8. test information [1] american technical ceramics type 100b or capacitor of same quality. [2] american technical ceramics type 180r or capacitor of same quality. [3] american technical ceramics type 100a or capacitor of same quality. [4] printed-circuit board (pcb): rogers 5880; e r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m m. table 9. list of components for test circuit, see figure 14 , figure 15 and figure 16 . component description value remarks c1, c2 multilayer ceramic chip capacitor 5.1 pf [1] c3, c4 multilayer ceramic chip capacitor 10 pf [2] c5 multilayer ceramic chip capacitor 6.8 pf [1] c6 multilayer ceramic chip capacitor 4.7 pf [1] c7 multilayer ceramic chip capacitor 2.7 pf [1] c8, c9, c10, c25, c26 multilayer ceramic chip capacitor 100 pf [1] c11, c27 multilayer ceramic chip capacitor 10 m f tdk c570x7r1h106kt000n or capacitor of same quality. c12 electrolytic capacitor 470 m f; 63 v c20 multilayer ceramic chip capacitor 10 pf [3] c21 multilayer ceramic chip capacitor 8.2 pf [3] c22 trimmer 0.6 pf to 4.5 pf tekelec c23 multilayer ceramic chip capacitor 6.8 pf [3] c24 multilayer ceramic chip capacitor 3.9 pf [3] l1 stripline - [4] (w l) 7 mm 15 mm l2 stripline - [4] (w l) 2.4 mm 9mm l3 stripline - [4] (w l) 2.4 mm 10 mm l4 stripline - [4] (w l) 2.4 mm 25 mm l5 stripline - [4] (w l) 2.4 mm 10 mm l6 stripline - [4] (w l) 2.0 mm 20 mm l7 stripline - [4] (w l) 2.0 mm 21 mm l20 stripline - [4] (w l) 7 mm 12 mm l21 stripline - [4] (w l) 2.4 mm 13 mm l22 stripline - [4] (w l) 2.4 mm 31 mm l23 stripline - [4] (w l) 2.4 mm 5mm r1 resistor 100 w r2 resistor 10 k w www.datasheet.in
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BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 13 of 18 nxp semiconductors BLF871 uhf power ldmos transistor fig 15. printed-circuit board (pcb) for class-ab common source ampli?er 001aaj289 40 mm 40 mm 76.2 mm www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 14 of 18 nxp semiconductors BLF871 uhf power ldmos transistor see t ab le 9 for a list of components. fig 16. component layout for class-ab common source ampli?er 001aaj290 c26 c25 c23 c21 c20 c22 c24 l23 l23 l4 l21 l20 l1 l2 c27 c9 c11 c12 l6 l7 c1 c2 c3 c4 c8 c7 c6 c5 l3 l5 c10 r2 r1 www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 15 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 9. package outline fig 17. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 16 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description cw continuous wave ccdf complementary cumulative distribution function dvb digital video broadcast dvb-t digital video broadcast - terrestrial esd electrostatic discharge hf high frequency imd3 third order intermodulation distortion ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor ofdm orthogonal frequency division multiplexing par peak-to-average power ratio pep peak envelope power rf radio frequency ttf time to failure uhf ultra high frequency vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes BLF871_2 20090305 preliminary data sheet - BLF871_1 modi?cations: ? t ab le 1 on page 1 : corrected some values ? section 1.2 on page 1 : corrected some values ? t ab le 6 on page 3 : corrected some values ? t ab le 6 on page 3 : removed g fs speci?cation ? t ab le 7 on page 4 : corrected some values. BLF871_1 20081218 objective data sheet - - www.datasheet.in
BLF871_2 ? nxp b.v. 2009. all rights reserved. preliminary data sheet rev. 02 5 march 2009 17 of 18 nxp semiconductors BLF871 uhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. www.datasheet.in
nxp semiconductors BLF871 uhf power ldmos transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 5 march 2009 document identifier: BLF871_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 narrowband rf ?gures. . . . . . . . . . . . . . . . . . . 5 7.1.1 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.2 2-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.3 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2 broadband rf ?gures. . . . . . . . . . . . . . . . . . . . 7 7.2.1 2-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.2.2 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.3 ruggedness in class-ab operation. . . . . . . . . . 9 7.4 impedance information . . . . . . . . . . . . . . . . . . . 9 7.5 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 contact information. . . . . . . . . . . . . . . . . . . . . 17 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 www.datasheet.in

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